发明名称 Resonant gate driver
摘要 A power supply (500) with vertical field effect transistor synchronous rectifiers (VFET1 and VFET2) having drivers (VFET Driverl and VFET Driver2) which provide bipolar mode of operation by diode clamping an inductor overshoot which forwards biases the gate-source junction. The rectifiers have low on resistance useful in low output voltage power supplies.
申请公布号 US2002110004(A1) 申请公布日期 2002.08.15
申请号 US20010788803 申请日期 2001.02.20
申请人 PARKS DAVID B. 发明人 PARKS DAVID B.
分类号 H02M3/158;H02M3/335;(IPC1-7):H02M3/335 主分类号 H02M3/158
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