发明名称 |
METHOD OF ROUGHLY GRINDING SEMICONDUCTOR WAFER, AND APPARATUS OF GRINDING THE SEMICONDUCTOR WAFER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of grinding a semiconductor wafer capable of stabilizing roughness of a surface of the semiconductor wafer by a rough grinding process and efficiently performing a finish-grinding process. <P>SOLUTION: The method of roughly grinding the semiconductor wafer for roughly grinding the semiconductor wafer W using a grinder 1 includes, in rough grinding before mirror-finish grinding of the wafer W, a first grinding step of grinding the semiconductor wafer W by slurry containing colloidal silica supplied from a slurry supply device 4 and a second grinding step of grinding with pure water supplied from a pure water supply device 5 and an alkaline concentrate solution supplied from an alkaline concentrate solution supply device 6. A pH value of the alkaline solution and grinding time during the second grinding step are specified based on a load current value of a grinding board 2 during the first grinding step. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008091383(A) |
申请公布日期 |
2008.04.17 |
申请号 |
JP20060267286 |
申请日期 |
2006.09.29 |
申请人 |
SUMCO TECHXIV CORP |
发明人 |
KOSASA KAZUAKI;KAWASAKI TOMONORI;MIYOSHI KOSUKE |
分类号 |
H01L21/304;B24B37/00;B24B37/015 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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