| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which has a high level of resolution, a good pattern shape and a satisfactory depth of focus, and at the same time, has no significant defects after the development and has excellent plasma etching resistance. <P>SOLUTION: A positive resist composition comprises: (A) a resin which comprises all of repeating units represented by general formulae (I) to (III) and is rendered soluble in an alkali developing solution through the action of acid; and (B) a compound which generates acid upon exposure to an actinic radiation or a radiation. A method for pattern formation uses the positive resist composition. In the formulae, A represents a group which is decomposed and eliminated through the action of acid, R<SB>1</SB>each independently presents hydrogen or a methyl group, R<SB>2</SB>presents a phenyl group or cyclohexyl group, m denotes an integer of 1 or 2 and n denotes an integer of 0 to 2. <P>COPYRIGHT: (C)2010,JPO&INPIT |
