Semiconductor memory device

摘要

Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor (20) having a drain region (12) and a source region (14) is formed on an Si semiconductor substrate (10). A lower end of a storage node (32) is electrically connected to the drain region through a drain contact hole (30) defined in an interlayer insulator (26). The storage node has an on-film extending portion (36) which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion (38) which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region (34) so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole (40) defined in the interlayer insulator. <IMAGE>