| 摘要 |
<P>PROBLEM TO BE SOLVED: To further reduce the defect density on the surface of a group III-V compound semiconductor crystal layer as compared with a prior art. <P>SOLUTION: When the group III-V compound semiconductor crystal layer represented by general formula In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (wherein x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) is manufactured, after dispersing and forming a plurality of projection-like group III-V compound semiconductors, the group III-V compound semiconductor is laterally grown with the plurality of the group III-V compound semiconductors as seed crystals, and a flat crystal surface of the group III-V compound semiconductor is formed. The terminating position of a dislocation on the surface of the laterally grown group III-V compound semiconductor layer has a tendency converged on a corresponding region at a top of each projection-like part. Thus, the defect density on the surface of the laterally grown group III-V compound semiconductor can be further reduced as compared with the prior art. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
