METHOD OF FORMING A GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

摘要

A method of forming a gate structure of a semiconductor device is provided to restrain the degradation of a transistor and to improve the reliability of the transistor by using a dual gate insulating layer structure. A silicon oxide layer is formed on a semiconductor substrate(100) with a high voltage region and a low voltage region. A first gate insulating layer(120b) is formed on the resultant structure by removing the silicon oxide layer from the low voltage region of the substrate. A thin film made of a metallic oxide is formed on the resultant structure. A second insulating layer(140b) is formed on the resultant structure by removing the thin film from the first insulating layer. A conductive layer is uniformly formed on the resultant structure.