发明名称 Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
摘要 An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
申请公布号 US9409767(B2) 申请公布日期 2016.08.09
申请号 US201113977140 申请日期 2011.11.03
申请人 Intel Corporation 发明人 Gardner Donald S.;Chen Zhaohui;Jin Wei C.;Hannah Eric C.;Gustafson John L.;Aldridge Tomm V.
分类号 H01G9/00;B81B7/00;C25F3/02;H01G11/04;H01M4/00;H01G11/26;H01G11/30;C25F3/12;H01M4/04;H01M4/38 主分类号 H01G9/00
代理机构 代理人 Nelson Kenneth A.
主权项 1. An energy storage structure comprising: an energy storage device comprising at least one porous structure, the porous structure being formed from a first material, wherein the porous structure contains multiple channels, each one of which has an opening to a first surface of the porous structure; and a support structure for the energy storage device, the support structure formed from the first material, wherein the support structure physically contacts a first portion of the energy storage device and exposes a second portion of the energy storage device.
地址 Santa Clara CA US
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