发明名称 3D Semiconductor Package Interposer with Die Cavity
摘要 Disclosed herein is a method of forming a device, comprising mounting a plurality of first interconnects on one or more first integrated circuit dies. One or more second integrated circuit dies are mounted on a first side of an interposer. The interposer is mounted at a second side to the first integrated circuit dies, the plurality of first interconnects disposed outside of the interposer. The interposer is mounted to a first side of a substrate by attaching the first interconnects to the substrate, the substrate in signal communication with one or more of the first integrated circuit dies through the first interconnects.
申请公布号 US2016254249(A1) 申请公布日期 2016.09.01
申请号 US201615154770 申请日期 2016.05.13
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Jeng Shin-Puu;Hou Shang-Yun;Chen Kim Hong;Hung Wensen;Huang Szu-Po
分类号 H01L25/065;H01L23/538;H01L23/367;H01L23/31;H01L21/683;H01L21/48;H01L25/00;H01L21/56;H01L25/18;H01L23/498;H01L23/00 主分类号 H01L25/065
代理机构 代理人
主权项 1. A device, comprising: a substrate having a top surface; an interposer over the top surface of the substrate and having a first major surface facing the substrate, the interposer having a first redistribution line (RDL) disposed at the first major surface thereof and a second RDL disposed at a second major surface thereof opposite the first major surface; a first integrated circuit die mounted to the second RDL; a second integrated circuit die mounted to the first RDL; an interconnect extending outside a periphery of the interposer, the interconnect electrically connecting the substrate to the first integrated circuit die; a first connector electrically connecting the interposer and the second integrated circuit die; and a second connector electrically connecting the first RDL and the substrate.
地址 Hsin-Chu TW