A NOVEL BUFFER(SEED) LAYER FOR MAKING A HIGH-PERFORMANCE MAGNETIC TUNNELING JUNCTION MRAM

摘要

PURPOSE: A buffer layer for manufacturing high performance tunneling HRAM is provided to form tunneling barrier layer and integrate MTJ MRAM or TMR reading head for manufacturing high-end magnetic tunneling junction MRAM. CONSTITUTION: A buffer layer for manufacturing high performance tunneling HRAM is as follows. A substrate for shielding NiFe lower shield with upper surface of a plane surface is supplied. The top layer of Ta(85) formed on a substrate. The thickness of Ta top layer is reduced and etched. Te NiCr layer is formed on the Ta phase strata etched. An AFM(AntiFerroMagnetic) pinned layer is formed on the NiCr seed layer.