THE METHOD OF SIMULATION FOR ALD PROCESS

摘要

A simulation method for an ALD(Atomic Layer Deposition) is provided to predict exactly the thickness and composition of a thin film by using a thin film growing mechanism modeling. A governing equation and a surface coverage are defined. A area reduction ratio is defined and the defined area reduction ratio is related with the surface coverage. The area ratio of each exposed film is calculated per each cycle. The number of mono layers of each film is calculated during each super cycle. The thickness and composition of the total thin film structure are calculated. Parameters for being used in simulation are then extracted.