发明名称 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS
摘要 A bit of plasma treatment equipment with an etching apparatus and an ashing apparatus and a plasma treatment method using the same are provided to restrain the existence of unwanted materials on an object body. A bit of plasma treatment equipment includes an etching apparatus and an ashing apparatus. The etching apparatus is composed of a first gas supply unit for supplying an etching gas to a process chamber(1), a first vacuum exhaust unit, a first stage for loading an object body(2), a first transfer unit, and a first plasma generating unit for generating a predetermined plasma in the process chamber. The ashing apparatus is composed of a second gas supply unit(4), a second vacuum exhaust unit, a second stage for loading the object body, a second transfer unit, and a second plasma generating unit. The diameter of a second loading portion of the second stage is smaller than that of a first loading portion of the first stage.
申请公布号 KR20070013997(A) 申请公布日期 2007.01.31
申请号 KR20060015675 申请日期 2006.02.17
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KOBAYASHI HIROYUKI;IZAWA MASARU
分类号 H01L21/3065 主分类号 H01L21/3065
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