THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having excellent TFT characteristics.SOLUTION: A manufacturing method of a thin film transistor 100 comprises: a step of forming an oxide semiconductor layer 120a onto the upper side of a substrate 110; a step of forming a gate insulation layer 130 onto the upper side of the oxide semiconductor layer 120a; a step of forming a gate electrode 140 onto the upper side of the gate insulation layer 130; a step of forming a cover layer 145 onto the gate electrode 140; a step of forming a side wall insulation layer 141 to a side wall part of the gate electrode 140 by performing a heat treatment after the cover layer 145 is formed; a step of forming an interlayer insulation layer 170 that covers the gate electrode 140 and an oxide semiconductor layer 120 after the side wall insulation layer 141 is formed; and a step of forming a source electrode 180s and a drain electrode 180d that are electrically connected to the oxide semiconductor layer 120 onto the upper side of the interlayer insulation layer 170.SELECTED DRAWING: Figure 7B