| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device small in dispersion of element characteristics, and high in quantum efficiency. <P>SOLUTION: On an n-type InP substrate 10 (semiconductor substrate), an n-type DBR layer 12 (first conductivity type distribution Bragg reflection layer), an n-type InP distortion relaxing layer 14 (first conductivity type distortion relaxing layer), a low-carrier-concentration i-InGaAs light absorption layer 16 (light absorption layer) and a p-type InP window layer 18 (second conductivity type semiconductor layer) are sequentially formed. The n-type InP distortion relaxing layer 14 is formed of the same material as that of the n-type InP substrate 10. The total optical length of a layer formed between the n-type DBR layer 12 and the i-InGaAs light absorption layer 16 is an integral multiple of a half of the wavelength λ of incident light. <P>COPYRIGHT: (C)2010,JPO&INPIT |
