发明名称 METHOD OF MANUFACTURING OXIDE FILM AND SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method that enables film deposition on a large area substrate.SOLUTION: Provided is a method of manufacturing an oxide film using a sputtering apparatus which has a target unit 150a and a substrate 160 installed at a substrate holder 170, where a first target 100a and a second target 100b are located with a predetermined space therebetween so that front surfaces thereof face each other, and the substrate holder 170 and a side of the target unit 150a are located with a predetermined space therebetween. The method includes forming plasma including an ion between the first target 100a and the second target 100b by application of a potential therebetween, generating sputtering particles including the oxide, and depositing the sputtering particles on the substrate 160 while the target unit 150a is moved in a direction parallel to a formation surface of the substrate.SELECTED DRAWING: Figure 11
申请公布号 JP2016164308(A) 申请公布日期 2016.09.08
申请号 JP20160024788 申请日期 2016.02.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C23C14/34;C23C14/08;H01L21/336;H01L21/363;H01L21/8234;H01L27/088;H01L29/786 主分类号 C23C14/34
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