| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A semiconductor device includes a substrate, a first gate, a second gate, and an insulating structure. The substrate includes a first fin and a second fin. The first gate is disposed over the first fin. The second gate is disposed over the second fin. A gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate. The insulating structure is disposed in the gap. The insulating structure has a top surface and a bottom surface opposite to each other. The bottom surface faces the substrate. An edge of the top surface facing the first gate is curved inward the top surface. | ||
| 申请公布号 | US9461043(B1) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514754627 | 申请日期 | 2015.06.29 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Chang Che-Cheng;Lin Chih-Han;Chen Wei-Ting |
| 分类号 | H01L27/088;H01L29/66;H01L21/3213;H01L21/8234;H01L29/78;H01L27/12 | 主分类号 | H01L27/088 |
| 代理机构 | Maschoff Brennan | 代理人 | Maschoff Brennan |
| 主权项 | 1. A semiconductor device, comprising: a substrate comprising a first fin and a second fin; a first gate disposed over the first fin; a second gate disposed over the second fin, wherein a gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate; and an insulating structure disposed in the gap, wherein the insulating structure has a top surface and a bottom surface opposite to each other, the bottom surface faces the substrate, and an edge of the top surface facing the first gate is curved inward at the top surface. | ||
| 地址 | Hsinchu TW | ||