Pure boron for silicide contact

摘要

A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2.

主权项

1. A method of making a semiconductor device, the method comprising:
performing an epitaxial growth process to form epitaxial contacts on opposing sides of a gate positioned over a substrate; removing portions of the epitaxial contacts to form trench contact patterns; depositing a conformal layer comprising amorphous boron within the trench contact patterns, the conformal layer forming a discrete interfacial layer within the epitaxial contacts, and the discrete interfacial layer comprising boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2; removing the conformal layer comprising amorphous boron; and filling the trench contact patterns with a high-k dielectric material and a conductive metal to form trench contacts.