| 摘要 |
A semiconductor light-emitting element (10) is provided with a GaN layer (13), an InGaN layer (14) directly above the GaN layer (13), and a multiple quantum well layer (15) directly above the InGaN layer (14). Distortion of the InGaN layer (14) due to lattice mismatch with the GaN layer (13) is partially or completely relaxed. |
