| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can satisfy both of improvement in a switching speed and improvement in voltage withstanding.SOLUTION: A nitride semiconductor device 3 includes: a nitride semiconductor layer having a gate electrode 19, a source electrode 17 and a drain electrode 18; and a field plate part 192 which is a part of the gate electrode 19. When assuming that a drain voltage value where a value of Cis decreased to 1/2 of a value at the drain voltage of 0 V is V, a breakdown voltage of a device is V, a gate length is L, a field plate length is L, a shallow acceptor concentration is N, a deep acceptor concentration is N, a permittivity of vacuum is εand a relative permittivity of GaN is ε, the following formulas (1) and (2) are satisfied: V<q(N+N)L/2εε (1); V<q(N+N)(L+L)/2εε (2).SELECTED DRAWING: Figure 2 |
