| 摘要 |
PURPOSE:To obtain an Si or Ge light-emitting element, which has a high luminous efficiency and high satisfactory can-stability, by a method wherein a substrate formed with a film, in which at least one kind of fine particles out of the Sn and Pb fine particles of a group IVb and the Ar, Sb and Bi fine particles of a group Vb are made of disperse, on its surface is formed into an Si substrate or Ge substrate. CONSTITUTION:At least one kind of fine particles 13 out of dispersed Sn and Pb fine particles of a group IVb and dispersed As, Sb and Bi fine particles of a group Vb directly generate some surface structure, which affects light emission, between a film 12 and an Si substrate 11 or a Ge substrate or via the film 12, which is used as a dispersion medium, and light is emitted in the interface between the film 12 with the fine particles 13 dispersed and the substrate 11 or the Ge substrate by light excitation. Accordingly, the light emission, which has a high luminous efficiency and a satisfactory can-stability, is given. Moreover, a light-emitting element consists of a low-cost material including Si and in addition, the element can be generally manufactured by a sputtering technique without depending upon a high-degree technique, such as an epitaxy. |
