发明名称 |
Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter EPI layer |
摘要 |
The present invention relates to a heterojunction bipolar transistor, and comprises a collector region, and a graded profile SiGe base layer overlying the collector region. The transistor further comprises a diffusion blocking layer overlying the graded profile SiGe base layer, and an emitter layer overlying the diffusion blocking layer. The diffusion blocking layer is operable to retard a diffusion of dopants therethrough from the emitter layer to the graded profile SiGe base layer, thereby allowing for a reduction in the thickness of the layer comprising a graded profile SiGe layer and a buffer layer. The thickness reduction allows increased Ge concentration in the base layer and the emitter/base doping profile is improved, each leading to improved transistor performance.
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申请公布号 |
US2002094658(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20020091242 |
申请日期 |
2002.03.04 |
申请人 |
SWANSON LELAND S.;HOWARD GREGORY E. |
发明人 |
SWANSON LELAND S.;HOWARD GREGORY E. |
分类号 |
H01L21/331;H01L29/08;H01L29/24;H01L29/737;H03K19/003;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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