| 摘要 |
<p>A method of simultaneously fabricating at least two semiconductor devices, at least one of which is an nanocrystal memory and at least one of which is a non-nanocrystal semiconductor device. A nanocrystal layer (18) is formed over an oxide layer (16) of the at least two semiconductor devices being fabricated. The nanocrystal layer (18) is removed from at least one portion o the substrate (10) corresponding to the at least one non-nanocrystal device being fabricated. A polycrystalline gate is formed for each of the semiconductor devices being fabricated. Doping is provided to provide the source and drain regions (42, 36, 44, 46) for each of the semiconductor devices being fabricated. The substrate (10, 12) is thermally treated after the doping. The thermal budget of the fabrication process is not limited by this thermal treatment.</p> |
