| 摘要 |
<p>A semiconductor device is provided to form a contactless memory array in which a contact hole is not formed in the data line of each memory cell, by using the source/drain of a memory cell transistor as a local data line so that a data line is formed under a wordline. A first charge retention region is formed on a semiconductor substrate(1) of a first conductivity type by interposing a first insulation layer. A second charge retention region is formed on the semiconductor substrate by interposing a second insulation layer. A first gate electrode is formed on the first charge retention region by interposing a first gate insulation layer(4), extended in a first direction. A second gate electrode is formed on the second charge retention region by interposing a second gate insulation layer(5), extended in the first direction. A semiconductor layer(10) is formed on the semiconductor substrate to cross the first and second gate electrodes, extended in a second direction. The semiconductor layer becomes a first impurity region of a first conductivity type. A second impurity region of the second conductivity type can be included in the semiconductor layer, having a lower impurity density than that of the first impurity region. The second impurity region is formed between the semiconductor substrate and the first impurity region.</p> |
