Heterojunction bipolar transistor

摘要

The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, =; and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.

主权项

1. A heterojunction bipolar transistor, comprising:
a substrate having a top surface; first, second, and third isolation trenches in the substrate, the second isolation trench being between the first and third isolation trenches; a buried collector in the substrate extending between the first isolation trench and the third isolation trench; a collector contact between the second isolation and the third isolation trench; a recess in the substrate between the first isolation trench and the second isolation trench; a base region formed in the recess below the top surface of the substrate between first and second isolation trenches, the base region including silicon germanium, and the entire base region being formed below the top surface of the substrate, the base region abutting the first and second isolation trenches; and an emitter stack positioned above the base, all of the emitter stack formed above the top surface of the substrate, the emitter stack formed between the first and second isolation trenches.