| 摘要 |
<p>PURPOSE: A polysilicon thin film transistor and a manufacturing method thereof are provided to minimize the defect due to step coverage by performing the pattern process of active layer in the dry etching. CONSTITUTION: A semiconductor layer(142) has a uniform thickness in the central part. If it comes near to the end of the semiconductor layer, the semiconductor layer is included in the edge part of the taper shape which is gradually lowered than the thickness of the central part. A protective film(155) covers the gate electrode. The source and drain holes(SH,DH) expose the above semiconductor layer. A source electrode(132) is touched through the source hole on the protective film by the above semiconductor layer. A drain electrode(134) is touched through the drain hole by the above semiconductor layer.</p> |
