Temperature insensitive external cavity lasers on silicon

摘要

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

主权项

1. A method of configuring a semiconductor chip, the method comprising:
providing an optical gain chip attached to a semiconductor substrate; and providing an integrated photonic circuit on the semiconductor substrate, the optical gain chip optically coupled to the integrated photonic circuit thereby forming a laser cavity, wherein the integrated photonic circuit comprises: an active intra-cavity thermo-optic optical phase tuner element; an intra-cavity optical band-pass filter; and an output coupler band-reflect optical grating filter with passive phase compensation; wherein the active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.