| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of reducing stress in reading by decreasing the number of accesses to a reference cell at the time of reading.SOLUTION: A memory 1 includes, as a reading circuit of a data cell 2, a reference cell 3, a detection part 4, a reference generation part 5, and a comparison part 8. After a power is turned on, when reading data of the data cell 3, the memory 1 reads a reference current of the reference cell 3 by the detection part 4, and sets it at the reference generation part 5 as a reference value. The comparison part 6 compares a data current of the data cell 3 with the reference value of the reference generation part 5, for outputting data. After that, by reading the data of the data cell 2 by using the reference value of the reference generation part 5, the number of times of accessing to the reference cell 3 can be significantly decreased, for improved reliability.SELECTED DRAWING: Figure 1 |
