发明名称 METHOD FOR CONTROLLING PLASMA DENSITY OR THE DISTRIBUTION THEREOF IN A MAGNETRON SPUTTER SOURCE AND MAGNETRON SPUTTER SOURCE
摘要 Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop. The electrode arrangement along the limited segment area is electrically isolated from the remainder of the electrode configuration so as to be electrically operated differently than the remainder of the electrode configuration.
申请公布号 EP1258026(B1) 申请公布日期 2016.12.28
申请号 EP20010900068 申请日期 2001.01.12
申请人 Evatec AG 发明人 KRASSNITZER, Siegfried
分类号 C23C14/35;H01J37/34 主分类号 C23C14/35
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