Storage element, storage device, method of manufacturing storage element, and magnetic head

摘要

A storage element includes a layer structure, which includes a storage layer including magnetization perpendicular to the film surface, in which the magnetization direction is changed corresponding to information; a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer; a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer. A low resistance region is formed in a portion of the spin barrier layer formed with a predetermined set film thickness value and information storage on the storage layer is performed by changing the magnetization direction of the storage layer by current flowing in the stacking direction of the layer structure.

主权项

1. A storage element comprising a layer structure, the layer structure including:
a storage layer including magnetization perpendicular to the film surface, in which the direction of magnetization is changed corresponding to information; a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer; a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer, wherein a low resistance region is formed in a portion of the spin barrier layer formed with a predetermined set film thickness value and storage of information on the storage layer is performed by changing the direction of magnetization of the storage layer by current flowing in the stacking direction of the layer structure, wherein the spin barrier layer is set as the low resistance region by being formed so that a partial film thickness value is a lower value than the set film thickness value, wherein an electrode layer is provided on the surface side of the spin barrier layer opposite to the surface that contacts the storage layer, wherein a portion of the electrode layer is formed so as to enter with respect to the spin barrier layer in the film thickness direction, and formed so that the film thickness value of the entering portion of the spin barrier layer is a lower value than the set film thickness value, wherein the electrode layer is formed by a plurality of layers including a first electrode layer and a second electrode layer that are stacked in order from the spin barrier layer side, and wherein a portion of the second electrode layer is formed so as to enter with respect to the spin barrier layer in the film thickness direction after passing through the first electrode layer in the film thickness direction.