发明名称 Method of etching a semiconductor layer of a photovoltaic device
摘要 A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.
申请公布号 US9397238(B2) 申请公布日期 2016.07.19
申请号 US201213609284 申请日期 2012.09.11
申请人 FIRST SOLAR, INC. 发明人 Wang Jianjun;Karpenko Oleh P.;Sorenson Thomas A.
分类号 H01L21/06;H01L31/0224;H01L31/0376;H01L31/0236;H01L31/0296;H01L31/20 主分类号 H01L21/06
代理机构 Blank Rome LLP 代理人 Blank Rome LLP
主权项 1. A method of manufacturing a photovoltaic device, the method comprising: forming an absorber layer having a back surface; etching at least a portion of the back surface of the absorber layer with an etchant comprising HCl and H2O2 to increase roughness of the back surface of the absorber layer; treating the etched absorber layer with a chloride compound, said treating comprising CdCl2 doping the absorber layer and heating the absorber layer; and forming a conductive material in contact with the back surface of the absorber layer; and wherein said etching increases a roughness mean value from below about 10 nm prior to etching to greater than about 10 nm after etching.
地址 Perrysburg OH US