发明名称 |
Method of etching a semiconductor layer of a photovoltaic device |
摘要 |
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process. |
申请公布号 |
US9397238(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201213609284 |
申请日期 |
2012.09.11 |
申请人 |
FIRST SOLAR, INC. |
发明人 |
Wang Jianjun;Karpenko Oleh P.;Sorenson Thomas A. |
分类号 |
H01L21/06;H01L31/0224;H01L31/0376;H01L31/0236;H01L31/0296;H01L31/20 |
主分类号 |
H01L21/06 |
代理机构 |
Blank Rome LLP |
代理人 |
Blank Rome LLP |
主权项 |
1. A method of manufacturing a photovoltaic device, the method comprising:
forming an absorber layer having a back surface; etching at least a portion of the back surface of the absorber layer with an etchant comprising HCl and H2O2 to increase roughness of the back surface of the absorber layer; treating the etched absorber layer with a chloride compound, said treating comprising CdCl2 doping the absorber layer and heating the absorber layer; and forming a conductive material in contact with the back surface of the absorber layer; and wherein said etching increases a roughness mean value from below about 10 nm prior to etching to greater than about 10 nm after etching. |
地址 |
Perrysburg OH US |