SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device according to an embodiment comprises: a memory cell array, the memory cell array including: an inter-layer insulating layer and a conductive layer stacked in a stacking direction; a columnar semiconductor layer having a side surface that faces side surfaces of the inter-layer insulating layer and the conductive layer and extending in the stacking direction; and a block insulating layer and a block high-permittivity layer disposed between the columnar semiconductor layer and the conductive layer, the block insulating layer including: a first block insulating film that covers a side surface of the columnar semiconductor layer from a lower surface of the inter-layer insulating layer to an upper surface of the conductive layer in the stacking direction; and a second block insulating film that contacts the first block insulating film and covers at least a side surface and a lower surface of the conductive layer.

主权项

1. A semiconductor memory device, comprising:
a memory cell array, the memory cell array including: an inter-layer insulating layer stacked on a semiconductor substrate; a conductive layer stacked on the inter-layer insulating layer; a columnar semiconductor layer having a side surface that faces side surfaces of the inter-layer insulating layer and the conductive layer and extending in a stacking direction of the inter-layer insulating layer and the conductive layer; and a block insulating layer and a block high-permittivity layer disposed between the columnar semiconductor layer and the conductive layer, the block insulating layer including: a first block insulating film that covers a side surface of the columnar semiconductor layer at least from a lower surface of the inter-layer insulating layer to an upper surface of the conductive layer in the stacking direction; and a second block insulating film that contacts the first block insulating film and covers at least a side surface and a lower surface of the conductive layer.