METHOD OF PRODUCING SOI WAFER BY HYDROGEN ION IMPLANTING SEPARATION METHOD AND SOI WAFER PRODUCED BY THE METHOD,申请号KR1020007006562-传众专利搜索

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发明名称	METHOD OF PRODUCING SOI WAFER BY HYDROGEN ION IMPLANTING SEPARATION METHOD AND SOI WAFER PRODUCED BY THE METHOD
摘要
申请公布号	KR20010033179(A)	申请公布日期	2001.04.25
申请号	KR1020007006562	申请日期	2000.06.15
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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