| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress increase in buffer size even when capacity of a memory increases and even when page size increases. <P>SOLUTION: This semiconductor storage device has: the memory 10 having a data area wherein page data corresponding to one page are divided in each correction range and are stored, and a plurality of redundant areas each wherein management information including an error correction code corresponding to the page data is divided in each the correction range and is stored; a first buffer memory 22 holding the page data corresponding to one correction range read from the data area; a second buffer memory 24 holding the management information corresponding to one page read from the redundant area; and an error correction circuit 21a detecting an error of the page data held in the first buffer memory 22 on the basis of the management information held in the second buffer memory 24, and correcting it. <P>COPYRIGHT: (C)2007,JPO&INPIT |
