PASSIVATION STRUCTURE FOR FLASH MEMORY AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problems that device constituting components that are laid under the device should be effectively protected and a passivation structure more quickly and inexpensively manufactured than a passivation structure formed by a conventional method is required. SOLUTION: The passivation structure is for a semiconductor device having a high UV transmission silicon (UV-SiN) layer that gives an enhanced passivation effect using a minimum number of layers. The UV-SiN layer substantially follows the shape of a semiconductor substrate and is laid on a plurality of top metal lines formed on the semiconductor substrate, and recesses in shape are clearly indicated between the layer and the adjacent top metal lines. A spin-on-glass (SOG) material is embedded in the recesses in shape. An acid silicon nitride layer that is relatively thick and whose upper surface is substantially flat protects the form laid under the device from moisture and also prevents an alkali metal ion from passing it through. The acid silicon nitride layer protects the SOG material during a subsequent wet etching treatment. COPYRIGHT: (C)2008,JPO&INPIT