| 摘要 |
PROBLEM TO BE SOLVED: To improve the resistance to electrostatic discharge of a semiconductor device by reducing on-resistance of a protection circuit during protection operation. SOLUTION: A threshold voltage of a field effect transistor N1 is controlled by controlling the potential of a back gate thereof. Consequently, on-resistance of the protection circuit with respect to electrostatic discharge current can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
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