发明名称 |
METHOD AND SYSTEM FOR DISTRIBUTING GAS FOR A BEVEL EDGE ETCHER |
摘要 |
A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
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申请公布号 |
US2008216864(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070697695 |
申请日期 |
2007.04.06 |
申请人 |
SEXTON GREG;BAILEY ANDREW;SCHOEPP ALAN |
发明人 |
SEXTON GREG;BAILEY ANDREW;SCHOEPP ALAN |
分类号 |
B08B6/00;C25F3/30 |
主分类号 |
B08B6/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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