| 摘要 |
PURPOSE: A positive resist material, a patterning process using the same, and a polymerizable compound used in the method are provided to be useful in minute processing, and to ensure high resolution in a lithography technique, especially, an ArF lithography technique. CONSTITUTION: A positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a compound capable of generating an acid in response to actinic light or radiation, wherein the resin component (A) is a polymer comprising non-leaving hydroxyl group-containing recurring units of at least one type selected from the general formulae (1-1) to (1-3), wherein R1 is hydrogen, methyl or trifluoromethyl, X is a single bond or methylene, Y is hydroxyl or hydroxymethyl, and m is 0, 1 or 2. |
