发明名称 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
摘要 Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
申请公布号 US2016172542(A1) 申请公布日期 2016.06.16
申请号 US201615044627 申请日期 2016.02.16
申请人 LG INNOTEK CO., LTD. 发明人 JEONG Hwan Hee;LEE Sang Youl;SONG June O.;MOON Ji Hyung;CHOI Kwang Ki
分类号 H01L33/38;H01L33/32;H01L33/42;H01L33/06 主分类号 H01L33/38
代理机构 代理人
主权项 1. A light emitting device, comprising: a substrate; a light emitting structure disposed on the substrate and the light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a first transmissive electrode layer disposed on a top surface of the first conductive type semiconductor layer, a second transmissive electrode layer disposed on a top surface of the second conductive type semiconductor layer; a first electrode disposed on the first transmissive electrode layer; and a second electrode disposed on the second transmissive electrode layer, wherein at least one portion of the top surface of the second conductive type semiconductor layer is exposed from the second transmissive electrode layer, wherein an insulating layer is disposed on the second conductive type semiconductor layer and the insulating layer is not disposed on the top surface of the first conductive type semiconductor layer, wherein the first electrode has a first portion and an second portion under the first portion, wherein a width of the first portion is wider than a width of the second portion and a thickness of the first portion is different from a thickness of the second portion, and wherein both of the first portion and the second portion are electrically in contact with the first transmissive electrode layer.
地址 Seoul KR