Method for reducing contact resistance in MOS

摘要

A method for growing a III-V semiconductor structure on a SinGe1-n substrate, wherein n is from 0 to 1 is provided. The method includes the steps of: (a) bringing a SinGe1-n substrate to a high temperature; (b) exposing the area to a group V precursor in a carrier gas for from 5 to 30 min, thereby forming a doped region at said area; (c) bringing the SinGe1-n substrate to a low temperature; (d) exposing the doped region to a group III precursor in a carrier gas and to a group V precursor in a carrier gas until a nucleation layer of III-V material of from 5 to 15 nm is formed on the nucleation layer; (e) bringing the SinGe1-n substrate to an intermediate temperature; and (f) exposing the nucleation layer to a group III precursor in a carrier gas and to a group V precursor in a carrier gas.

主权项

1. A method for growing a III-V semiconductor structure on an area of a SinGe1-n substrate, wherein n is from 0 to 1, comprising the steps of:
(a) setting the temperature of a SinGe1-n substrate between 550° C. and 750° C. if n<0.5 and between 760 and 950° C. if n≧0.5; (b) exposing an area of the SinGe1-n substrate to a group V precursor in a carrier gas for from 5 to 30 min, thereby forming a doped region (9) at said area; (c) setting the temperature of the SinGe1-n substrate between 325° C. and 375° C.; (d) exposing the doped region to a group III precursor in a carrier gas and to a group V precursor in a carrier gas until a nucleation layer of III-V material of from 5 to 15 nm is formed on the doped region; (e) setting the temperature of the SinGe1-n substrate between 450° C. and 550° C.; and (f) exposing the nucleation layer to a group III precursor in a carrier gas and to a group V precursor in a carrier gas, thereby forming a III-V semiconductor structure.