PROCESS FOR PRODUCING AN EPITAXIAL SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE

摘要

Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm 2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600°C to 1700°C, at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 µm/hr.