Integrated circuit memory devices having data input and output lines extending along the column direction

摘要

Integrated circuit memory devices having data input and output lines in a column direction are provided. A column select line according to the present invention extends along a row direction. Data input and output lines extend along a column direction. Thus, an increase of layout area upon increase of the input and output lines can be reduced. The operational current also may be reduced. Differences in parasitic capacitance from the respective columns to global input and output lines also may be reduced.