| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of carrying out plasma processing uniformly at a low temperature. SOLUTION: This plasma processing device is equipped with a plasma generator 1, a plasma processing chamber 2a possessed of an inner space communicating with the plasma generator 1 and a slit-like opening 3 for introducing plasma generated by the plasma generator 1 into the inner space, and a substrate transfer system 11 so constituted as to let the substrate 60 pass under the opening 3 by moving it inside the plasma processing chamber 2a.</p> |
