| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a very high tamper resistance to improper analysis means due to FIB processing or the like from rear surface. SOLUTION: The semiconductor device is provided with a multilayer wiring structure wherein signal wiring of no trouble even if it is analyzed by using an upper wiring layer is formed as to hide a lower wiring and important wiring is formed in the lower wiring layer. Furthermore, a lowermost metallic wiring layer is formed at an allowable micro wiring pitch for manufacturing to hide a diffusion isolation layer, and a structure necessary for cutting defense wiring is formed in order to reach target wiring to be analyzed by FIB processing from the rear surface. Any signal, voltage or current is applied to the defense wiring to monitor the electric characteristics of the defense wiring. A means is provided to delete confidential information or shift the semiconductor device to a fixed mode in case when any change in electric characteristic or physical characteristic is acquired due to peeling, cutting and alteration of the defense wiring. COPYRIGHT: (C)2006,JPO&NCIPI |
