| 发明名称 |
NONVOLITILE MEMORY REFRESH |
| 摘要 |
A system and method of refreshing a nonvolatile memory having memory cells. The method includes identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; and refreshing the identified memory cells. |
| 申请公布号 |
US2016172029(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414570219 |
申请日期 |
2014.12.15 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Kern Thomas;Hofmann Karl;Goessel Michael |
| 分类号 |
G11C13/00;G11C29/52;G11C29/00;G06F11/10;G11C11/16;G11C29/08 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of refreshing a nonvolatile memory having memory cells, the method comprising:
identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; and refreshing the one or more identified memory cells. |
| 地址 |
Neubiberg DE |
