| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor memory device includes a plurality of data buffering units corresponding to a data line, wherein the data buffering units include a first data buffering unit suitable for latching data stored in a memory cell in a data read operation, and second data buffering units, an output unit suitable for outputting the data latched in the first data buffering unit, and a control block suitable for controlling a current path to be formed between the second data buffering units and the output unit in the data read operation. |
| 申请公布号 |
US2016172012(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514731146 |
申请日期 |
2015.06.04 |
| 申请人 |
SK hynix Inc. |
发明人 |
LIM Sang-Oh |
| 分类号 |
G11C7/10;G11C7/20 |
主分类号 |
G11C7/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a plurality of data buffering units corresponding to a data line, wherein the data buffering units include a first data buffering unit suitable for latching data stored in a memory cell in a data read operation, and second data buffering units; an output unit suitable for outputting the data latched in the first data buffering unit; and a control block suitable for controlling a current path to be formed between the second data buffering units and the output unit in the data read operation. |
| 地址 |
Gyeonggi-do KR |
