METHOD AND STRUCTURE OF MAKING ENHANCED UTBB FDSOI DEVICES

摘要

An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.

主权项

1. A device, comprising:
a substrate; a first insulating layer on the substrate, the first insulating layer having a top surface; a first recess and a second recess in the substrate; a second insulating layer in the first and second recess, the second insulating layer having a top surface, the top surface of the second insulating layer being below the top surface of the first insulating layer; a first semiconductor layer on the top surface of the first insulating layer and extending between the first and second recess; a gate structure on the first semiconductor layer, the gate structure having a first portion on a top surface of the first semiconductor layer and a second portion on the top surface of the second insulating layer, the gate structure being adjacent to both the top surface of the first semiconductor layer and side surfaces of the first semiconductor layer.