发明名称 |
ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE |
摘要 |
An array substrate, a method for fabricating the same, and a display device are provided. A metal shielding layer is electrically connected with a common electrode. A first connection part used for electrically connecting the metal shielding layer and the common electrode is arranged in the same layer as a source/drain electrode, and is electrically connected with the metal shielding electrode by means of a via penetrating the first insulating layer and the buffer layer. A storage capacitor is formed between an active layer and the metal shielding layer, increasing capacitance of the array substrate. The first connection part and the source/drain electrode which are arranged in the same layer can be formed by performing a patterning process once, thus reducing the fabricating flow, simplifying the fabricating process, saving the fabricating cost, and decreasing the fabricating time. |
申请公布号 |
US2016276376(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201414646046 |
申请日期 |
2014.08.25 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. |
发明人 |
Sun Jian;Chen Pengjun;Li Cheng;An Seongjun |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. An array substrate, comprising a substrate, and a metal shielding layer, a buffer layer, a top-gate thin film transistor, and a common electrode which are arranged on the substrate successively; wherein in the top-gate thin film transistor, a source/drain electrode is arranged over an active layer and is electrically connected with the active layer by means of a first via penetrating a first insulating layer between the source/drain electrode and the active layer, wherein the array substrate further comprises:
a first connection part which is arranged in the same layer as the source/drain electrode, is used for electrically connecting the metal shielding layer and the common electrode, and is electrically connected with the metal shielding layer by means of a second via penetrating the first insulating layer and the buffer layer. |
地址 |
Beijing CN |