TITANIUM NITRIDE HARD MASK AND ETCH RESIDUE REMOVAL

摘要

Composition, method and system for PVD TiN hard mask removal from 28/20nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.