| 摘要 |
A semiconductor device having structures for reducing substrate noise coupled from through die vias (TDVs) is described. In one example, a semiconductor device has a substrate, at least one signal through die via (TDV), and ground TDVs. The substrate includes conductive interconnect formed on an active side thereof. The conductive interconnect includes ground conductors and digital signal conductors. Each signal TDV is formed in the substrate and is electrically coupled to at least one of the digital signal conductors. The ground TDVs are formed in the substrate in a ring around the at least one signal TDV. The ground TDVs are electrically coupled to the ground conductors. The ground TDVs provide a sink for noise coupled into the substrate from the signal TDVs. In this manner, the ground TDVs mitigate noise coupled to noise-sensitive components formed on the substrate.
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