| 摘要 |
A semiconductor device, including a substrate of a first conductivity type, an active region and a termination structure portion formed on a front surface of the substrate, and a plurality of regions of a second conductivity type formed concentrically surrounding the periphery of the active region in the termination structure portion. Each region has a higher impurity concentration than one of the regions adjacent thereto on an outside thereof. The plurality regions include first and second semiconductor regions, and an intermediate region sandwiched between, and in contact with, the first and second semiconductor regions. The intermediate region includes a plurality of first subregions and a plurality of second subregions that are alternately arranged along a path in parallel to a boundary between the active region and the termination structure portion, the second subregions having a lower impurity concentration than the first subregions. |
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type; an active region, through which main current of the semiconductor device flows, formed on a front surface of the semiconductor substrate; a termination structure portion formed on the front surface of the semiconductor substrate and surrounding a periphery of the active region; a plurality of regions of a second conductivity type, formed concentrically surrounding the periphery of the active region in the termination structure portion, each region having a higher impurity concentration than one of the regions adjacent thereto on an outside thereof, the plurality of regions including
a first semiconductor region,a second semiconductor region on the outside of the first semiconductor region, andan intermediate region sandwiched between, and in contact with, the first and second semiconductor regions, wherein the intermediate region includes a plurality of first subregions and a plurality of second subregions that are alternately arranged along a path in parallel to a boundary between the active region and the termination structure portion, the second subregions having a lower impurity concentration than the first subregions. |
