INTERCONNECT STRUCTURE INCLUDING MIDDLE OF LINE (MOL) METAL LAYER LOCAL INTERCONNECT ON ETCH STOP LAYER

摘要

An interconnect structure includes an insulator stack on an upper surface of a semiconductor substrate. The insulator stack includes a first insulator layer having at least one semiconductor device embedded therein and an etch stop layer interposed between the first insulator layer and a second insulator layer. At least one electrically conductive local contact extends through each of the second insulator layer, etch stop layer and, first insulator layer to contact the at least one semiconductor device. The interconnect structure further includes at least one first layer contact element disposed on the etch stop layer and against the at least one conductive local contact.

主权项

1. A method of forming an interconnect structure, comprising:
forming an insulator stack on an upper surface of a semiconductor substrate, the insulator stack comprising a first insulator layer having at least one semiconductor device embedded therein, an etch stop layer interposed between the first insulator layer and a second insulator layer, and at least one electrically conductive local contact extending through the insulator stack to contact the at least one semiconductor device; selectively etching the second insulator layer to form at least one void that stops on an upper surface of the etch stop layer; and filling the at least one void with an electrically conductive material to form at least one first layer contact element against a sidewall of the at least one electrically conductive local contact.